QSS-μPCD measurement of lifetime in silicon wafers: Advantages and new applications

Energy Procedia

Volumn 8, Issue , 2011, Pages 128-134

  Wilson, Marshall ^a   Savtchouk, Alexandre ^a   Lagowski, Jacek ^a   Kis Szabo, Krisztian ^b   Korsos, Ferenc ^b   Toth, Atilla ^b   Kopecek, Radovan ^c   Mihailetchi, Valentin ^c  

^a Semilab SDI LLC   (United States)

^b SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD   (Hungary)

^c International Solar Energy Research Center (ISC) Konstanz   (Germany)

Author keywords

Lifetime; Photovoltaics; PCD

Indexed keywords

SILICON; SOLAR POWER GENERATION;

CONDUCTANCE MODULATIONS; EMITTER SATURATION CURRENTS; INJECTION LEVELS; LIFETIME; PHOTOVOLTAICS; QUASI-STEADY-STATE PHOTOCONDUCTANCE; SIMULTANEOUS DETERMINATIONS; SPATIALLY RESOLVED;

SILICON WAFERS;

EID: 80052084455     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.113     Document Type: Conference Paper

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