Low stress in-situ boron doped poly SiGe layers for MEMS modular integration with CMOS

ECS Transactions

Volumn 35, Issue 30, 2011, Pages 45-52

  Kazmi, S N R ^a   Aamink, A A I ^a   Kovalgin, A Y ^a   Salm, C ^a   Schmitz, J ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BORON DISTRIBUTION; BORON-DOPED; DIBORANE; LOW STRESS; PARTIAL PRESSURE RATIO; POLY-SIGE; POLYCRYSTALLINE; POLYCRYSTALLINE SILICON GERMANIUMS; SI-GE ALLOYS;

ACTUATORS; AMORPHOUS MATERIALS; DEPOSITS; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROSYSTEMS; POLYSILICON; SENSORS;

PARTIAL PRESSURE;

EID: 84866694206     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3653922     Document Type: Conference Paper

References (17)

1. S. Sedky, A. Witvrouw, A. Saerens, P. Van Houtte, J. Poortmans and K. Baert, J. Materials Research, 16, p.2607 (2001).
2. T..-J. King, R. T. Howe, S. Sedky, G. Liu, B. C. Y. Lin, M. Wasilik, and C. Duenn, IEEE International Electron Devices Meeting, p. 199, (2002).
3. Srinivasan Kannan, Craig Taylor and David Allred, J. Non-Crys. Solids, 352, p.1272 (2006).
4. M. A. Eyoum and T.-J. King, J. Electrochem. Soc., 151, p. J21, (2004).
5. Y. V. Ponomarev, P. A. Stolk, C. Salm, J. Schmitz, and P. H. Woerlee, IEEE Trans. on Electron Devices, 47, p.848 (2000).
6. C. Salm, D. T. van Veen, D. J. Gravesteijn, J. Holleman, and P. H. Woerlee, J. Electrochem. Soc., 144, p.3665 (1997).
7. H. Takeuchi, A. Wung, X. Sun, R. T. Howe, and T. J. King, IEEE Trans. on Electron Devices, 52, p.2081, (2005).
8. J. Schmitz, Nucl. Instr. And Meth., A 576, p. 142-149, (2007).
9. M. Biebl, G. T. Mulhern and R. T. Howe, 8th International Conference on Solid-state Sensors and Actuators - Transducers 95/Eurosensors IX, 1, p. 198, (1995).
10. T.-J. King, J. P. McVittie, K. C. Saraswat, and J. R. Pfiester, IEEE Trans. on Electron Devices, 41, p.228, (1994).
11. A. Kovalgin and J. Holleman, J. Electrochem. Soc., 153, p.363 (2006).
12. G. Stoney, Proc. R. Soc. London A, 82, p.172, (1909).
13. H. C. Lin, C. Y. Chang, W. H. Chen, W. C. Tsai, T. C. Chang, T. G. Jung, and H. Y. Lin," J. Electrochem. Soc., 141, p. 2559, (1994).
14. R. W. Cahn, Physical Metallurgy, North-Holland, Amsterdam (1965).
15. J. H. Wang, S. Y. Lien, C. F. Chen, and W. T. Whang," IEEE Electron Device Letters, 31, p. 38, (2010).
16. M. J. de Boer, J.G.E. Gardeniers, , H. V. Jansen, M.-J. Gilde, G. Roelofs, J. N. Sasserath, and M Elwenspoek, J. Microelectromech. Sys., 11, p.385 (2002).
17. A. Moriya, M. Sakuraba, T. Matsuura and J. Murota, Thin Solid Films, p. 541 (1999).