PECVD growth of Six:Ge1-x films for high speed devices and MEMS

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1272-1274

  Kannan, Srinivasan ^a   Taylor, Craig ^a   Allred, David ^b  

^a UNIVERSITY OF UTAH   (United States)

^b Brigham Young University   (United States)

Author keywords

Germanium; MEMs; Plasma deposition; Thin film transistors; X ray diffraction

Indexed keywords

CRYSTALLINE MATERIALS; GERMANIUM; INFRARED RADIATION; MICROELECTROMECHANICAL DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILM TRANSISTORS; X RAY DIFFRACTION ANALYSIS;

PLASMA DEPOSITION; RESISTIVITY MEASUREMENTS; SILICON-GERMANIUM (SIGE);

THIN FILMS;

EID: 33744535134     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.01.063     Document Type: Article

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