Large-grain polycrystalline silicon solar cell on epitaxial thickening of AIC seed layer by hot wire CVD

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 38-40

  Wang, Jui Hao ^a   Lien, Shui Yang ^b   Chen, Chia Fu ^b   Whang, Wha Tzong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b MINGDAO UNIVERSITY   (Taiwan)

Author keywords

Aluminum induced crystallization (AIC); Hot wire chemical vapor deposition (HWCVD); Polycrystalline silicon (poly Si)

Indexed keywords

ALUMINUM-INDUCED CRYSTALLIZATION; CRYSTALLINE FRACTIONS; EPITAXIAL THICKENING; FOREIGN SUBSTRATES; GRAIN SIZE; HOT WIRE CHEMICAL VAPOR DEPOSITION; HOT WIRE CVD; INITIAL EFFICIENCY; INTRINSIC LAYER; LARGE-GRAIN; POLY-SI; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON SOLAR CELL; SEED LAYER; THIN-FILM SOLAR CELLS;

ALUMINUM; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EPITAXIAL FILMS; EPITAXIAL LAYERS; POLYSILICON; SILICON SOLAR CELLS; SOLAR CELLS; THIN FILM DEVICES; WIRE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72949093997     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2035141     Document Type: Article

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