Top electrode size effect on hysteresis loops in piezoresponse force microscopy of Pb(Zr,Ti)O 3-film on silicon structures

Journal of Applied Physics

Volumn 112, Issue 5, 2012, Pages

  Bravina, S L ^a,b   Morozovsky, N V ^a,b   Eliseev, E A ^a   Morozovska, A N ^a   Costecalde, J ^b   Soyer, C ^b   Remiens, D ^b   Deresmes, D ^b  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL VALUE; DECOUPLING APPROXIMATION; DIELECTRIC ANISOTROPIES; DIELECTRIC PERMITTIVITIES; ELECTRIC FIELD DEPENDENCE; ELECTRODE SIZE; FERROELECTRIC POLARIZATION; LANDAU-GINZBURG-DEVONSHIRE THEORY; LATERAL SIZES; MODEL-BASED OPC; PB(ZR , TI)O; PIEZORESPONSE FORCE MICROSCOPY; PT ELECTRODE; RESPONSE AMPLITUDES; RF-MAGNETRON SPUTTERING; SILICON STRUCTURES; THEORETICAL STUDY;

ELECTRIC FIELDS; FILM THICKNESS; HYSTERESIS LOOPS; LEAD; MAGNETRON SPUTTERING; PERMITTIVITY; PLATINUM; SILICON OXIDES;

ZIRCONIUM;

EID: 84866405343     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4746028     Document Type: Conference Paper

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