Diamond bipolar junction transistor device with phosphorus-doped diamond base layer

Diamond and Related Materials

Volumn 27-28, Issue , 2012, Pages 19-22

  Kato, Hiromitsu ^a,b   Oyama, Kazuhiro ^a,b,c   Makino, Toshiharu ^a,b   Ogura, Masahiko ^a,b   Takeuchi, Daisuke ^a,b   Yamasaki, Satoshi ^a,b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Bipolar junction transistor; Current amplification; CVD; p n p; Phosphorus doped diamond

Indexed keywords

BASE LAYERS; BLOCKING VOLTAGE; CURRENT AMPLIFICATION; OPERATION CURRENTS; P-N-P; PHOSPHORUS-DOPED DIAMOND; POWER DEVICES; REPRODUCIBILITIES; ROOM TEMPERATURE; SERIES RESISTANCES;

AMPLIFICATION; BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION; DIAMONDS; ELECTRIC RESISTANCE; PHOSPHORUS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84861839318     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2012.05.004     Document Type: Article

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