Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2746-2748

  Sun, Y T ^a   Baskar, K ^a   Lourdudoss, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; SEMICONDUCTING SILICON; STRAIN; TENSILE STRENGTH; VAPOR PHASE EPITAXY;

EPITAXIAL LATERAL OVERGROWTH (ELO);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0042423606     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1593213     Document Type: Article

References (14)

1. B. Beaumont, P. Vennéguès, and P. Gibart, Phys. Status Solidi B 227, 1 (2001).
2. Y.T Sun, J. Napierala, and S. Lourdudoss, Proceedings of the Indium Phosphide and Related Materials Conference, Stockholm, Sweden, 2002, pp. 339-342.
3. Y.T. Sun, E. Rodríguez Messmer, D. Söderström, D. Jahan, and S. Lourdudoss, J. Cryst. Growth 225, 9 (2001).
4. P.F. Fewster, J. Appl. Crystallogr. 24, 178 (1991).
5. P.F. Fewster, Appl. Surf. Sci. 50, 9 (1991).
6. F.S. Hickernell and W.R. Gayton, J. Appl. Phys. 37, 462 (1966).
7. Y.T. Sun, S. Anand, and S. Lourdudoss, J. Cryst. Growth 237, 1418 (2002).
8. H. Yoshinaga, T. Matsumori, and F. Uehara, Jpn. J. Appl. Phys., Part 1 35, 2930 (1996).
9. G.E. Pikus and G.L. Bir, Sov. Phys. Solid State 1, 136 (1959).
10. A. Gavini and M. Cardona, Phys. Rev. B 1, 672 (1970).
11. H. Asia and K. Oe, J. Appl. Phys. 54, 2052 (1983).
12. F. H. Pollak and M. Cardona, Phys. Rev. 172, 816 (1968).
13. S.F. Fang, K. Adomi, S. Iyer, H. Morkoc, and H. Zabel, J. Appl. Phys. 68, R31 (1990).
14. M. Sugo and M. Yamaguchi, Appl. Phys. Lett. 54, 1754 (1989).