Photocarrier lifetime and transport in silicon supersaturated with sulfur

Applied Physics Letters

Volumn 101, Issue 11, 2012, Pages

  Persans, Peter D ^a   Berry, Nathaniel E ^a,e   Recht, Daniel ^b   Hutchinson, David ^a   Peterson, Hannah ^a,c,f   Clark, Jessica ^a,g   Charnvanichborikarn, Supakit ^d,h   Williams, James S ^b,d   Difranzo, Anthony ^a,i   Aziz, Michael J ^b   Warrender, Jeffrey M ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b HARVARD UNIVERSITY   (United States)

^c Benet Laboratories   (United States)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^e UNIVERSITY OF PENNSYLVANIA   (United States)

^f UNIVERSITY OF WASHINGTON   (United States)

^g UNIVERSITY OF MAINE   (United States)

^h LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

ⁱ UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION GRADIENTS; DOPED SILICON; HEAVILY DOPED; LASER MELTING; LOWER LIMITS; MINORITY CARRIER; MOBILITY-LIFETIME PRODUCTS; PHOTO-CARRIERS; PHOTOCARRIER LIFETIMES; SILICON ON INSULATOR; TRANSPORT LAYERS;

IMPURITIES; ION IMPLANTATION; PHOTOELECTRICITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

SULFUR;

EID: 84866339170     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4746752     Document Type: Article

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