Oxygen plasma power dependence on ZnO grown on porous silicon substrates by plasma-assisted molecular beam epitaxy

Materials Research Bulletin

Volumn 47, Issue 10, 2012, Pages 2879-2883

  Nam, Giwoong ^a   Kim, Min Su ^a   Kim, Do Yeob ^b   Yim, Kwang Gug ^a   Kim, Soaram ^a   Kim, Sung O ^b   Lee, Dong Yul ^c   Leem, Jae Young ^a  

^a Inje University   (South Korea)

^b Clemson University   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

A. Thin films; B. Epitaxial growth; B. Plasma deposition; C. X ray diffraction; D. Optical properties

Indexed keywords

ATOMIC OXYGEN; DEEP-LEVEL EMISSION PEAKS; GRAIN SIZE; OPTICAL EMISSION SPECTROMETRY; OXYGEN PLASMAS; PHOTOLUMINESCENCE INTENSITIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POROUS SILICON SUBSTRATES; RADIO FREQUENCIES; RADIO FREQUENCY POWER; STRUCTURAL AND OPTICAL PROPERTIES; VISIBLE RANGE; ZNO; ZNO THIN FILM;

EPITAXIAL GROWTH; METALLIC FILMS; MOLECULAR BEAM EPITAXY; OPTICAL EMISSION SPECTROSCOPY; OPTICAL FILMS; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; TUNGSTEN; X RAY DIFFRACTION; ZINC OXIDE;

RADIO WAVES;

EID: 84866335108     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2012.04.064     Document Type: Conference Paper

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