Fabrication of printed memory device having zinc-oxide active nano-layer and investigation of resistive switching

Current Applied Physics

Volumn 13, Issue 1, 2013, Pages 90-96

  Muhammad, Nauman Malik ^a   Duraisamy, Navaneethan ^a   Rahman, Khalid ^a   Dang, Hyun Woo ^a   Jo, Jeongdae ^b   Choi, Kyung Hyun ^a  

^a Jeju National University   (South Korea)

^b Korea Institute of Machine and Materials   (South Korea)

Author keywords

Bistable device; Electrohydrodynamics; Inkjet printing; Resistive switching; Zinc oxide

Indexed keywords

ALL-PRINTED; BISTABLE DEVICES; CURRENT-VOLTAGE MEASUREMENTS; ELECTROSPRAY PROCESS; HYSTERESIS BEHAVIOR; INKJET PRINTING PROCESS; MEMRISTOR; METAL INSULATORS; METAL STRUCTURES; METAL-INSULATOR-METAL STRUCTURES; METAL-OXIDE; NANO LAYERS; ON/OFF RATIO; POSITIVE VOLTAGE; RESISTIVE MEMORIES; RESISTIVE SWITCHING; SCANNING ELECTRON MICROSCOPE; UN-DOPED REGIONS;

CHARGE TRANSFER; ELECTROHYDRODYNAMICS; MEMRISTORS; METAL INSULATOR BOUNDARIES; PHOTOELECTRONS; PRINTING; RESISTORS; SCANNING ELECTRON MICROSCOPY; SWITCHING SYSTEMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

PASSIVE FILTERS;

EID: 84866060642     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2012.06.017     Document Type: Article

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