Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs 1-yN y alloys: Role of N-H n centers with n>2 and their thermal stability

Physical Review B - Condensed Matter and Materials Physics

Volumn 86, Issue 8, 2012, Pages

  Wen, L ^a   Stavola, M ^a   Fowler, W B ^a   Trotta, R ^b   Polimeni, A ^b,e   Capizzi, M ^b   Bisognin, G ^c   Berti, M ^c   Rubini, S ^d   Martelli, F ^d  

^a LEHIGH UNIVERSITY   (United States)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d LABORATORIO TASC   (Italy)

^e Institute of Semiconductor and Solid State Physics   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84865654190     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.86.085206     Document Type: Article

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