SCOPUS 정보 검색 플랫폼

Volumn 23, Issue 24, 2011, Pages 2706-2710

Fabrication of site-controlled quantum dots by spatially selective incorporation of hydrogen in Ga(AsN)/GaAs heterostructures

(11) Trotta, Rinaldo a,e Polimeni, Antonio a Martelli, Faustino b Pettinari, Giorgio c Capizzi, Mario a Felisari, Laura b Rubini, Silvia b Francardi, Marco d Gerardino, Annamaria d Christianen, Peter C M c Maan, Jan C c

a SAPIENZA UNIVERSITY OF ROME (Italy)

b LABORATORIO TASC (Italy)

c RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

d IFN CNR (Italy)

e IFW DRESDEN (Germany)

Author keywords

dilute nitrides; nanostructuring; photoluminescence; quantum dots

Indexed keywords

DILUTE NITRIDES; GAAS BARRIERS; HYDROGENATION PROCESS; NANO-FABRICATION METHODS; NANO-STRUCTURING; NANOEMITTERS; ORDERED ARRAY; QUANTUM DOT; SPECTROSCOPIC CHARACTERISTICS; ZERO-DIMENSIONAL;

GALLIUM ALLOYS; GALLIUM ARSENIDE; HYDROGEN; NITRIDES; PASSIVATION; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING GALLIUM;

GALLIUM; GALLIUM ARSENIDE; HYDROGEN; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; HYDROGENATION; LUMINESCENCE; NANOTECHNOLOGY; TEMPERATURE;

ARSENICALS; GALLIUM; HYDROGEN; HYDROGENATION; LUMINESCENT MEASUREMENTS; NANOTECHNOLOGY; QUANTUM DOTS; TEMPERATURE;

EID: 79959748050 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201004703 Document Type: Article

Times cited : (42)

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