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Volumn 22, Issue 9, 2012, Pages 1782-1801

Hydrogen incorporation in III-N-V semiconductors: From macroscopic to nanometer control of the materials' physical properties

Author keywords

dilute nitrides; hydrogen; nanostructuring; photoluminescence; quantum dots

Indexed keywords

DILUTE NITRIDES; GAAS; HETERO-INTERFACES; HYDROGEN INCORPORATION; HYDROGEN IRRADIATION; III-N-V; NANO-STRUCTURING; NANOMETER CONTROL; NANOMETER PRECISION; REVERSIBLE CHANGE; SEMICONDUCTOR CHIPS;

EID: 84860725484     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201102053     Document Type: Article
Times cited : (27)

References (104)
  • 1
    • 18444399583 scopus 로고    scopus 로고
    • (Eds: I. A. Buyanova, W. M. Chen), Taylor & Francis, New York
    • Physics and Applications of Dilute Nitrides (Eds:, I. A. Buyanova, W. M. Chen,), Taylor & Francis, New York 2004.
    • (2004) Physics and Applications of Dilute Nitrides
  • 2
    • 85014169645 scopus 로고    scopus 로고
    • (Ed: M. Henini), Elsevier, Amsterdam, The Netherlands
    • Dilute Nitride Semiconductors (Ed:, M. Henini,), Elsevier, Amsterdam, The Netherlands 2005.
    • (2005) Dilute Nitride Semiconductors
  • 5
    • 0035884111 scopus 로고    scopus 로고
    • b) Phys. Rev. B 2001, 64, 115208.
    • (2001) Phys. Rev. B , vol.64 , pp. 115208


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.