Improvement of the open circuit voltage by modifying the transparent indium-tin oxide front electrode in amorphous n-i-p solar cells

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 6, 2012, Pages 727-734

  Haug, Franz Josef ^a   Biron, Remi ^a   Kratzer, Gilles ^a   Leresche, Frank ^a   Besuchet, Jonathan ^a   Ballif, Christophe ^a   Dissel, Marcel ^b   Kretschmer, Sebastian ^b   Soppe, Wim ^b   Lippens, Paul ^c   Leitner, Klaus ^c  

^a EPFL   (Switzerland)

^b TNO   (Netherlands)

^c Thin Film Products AG   (Liechtenstein)

Author keywords

amorphous silicon; solar cells; work function

Indexed keywords

BARRIER HEIGHTS; DEPOSITED FILMS; INDIUM TIN OXIDE; ITO ELECTRODES; OXYGEN PARTIAL PRESSURE; THIN FILM SILICON; THIN-FILM SILICON SOLAR CELLS; TIN CONTENT; TRANSPARENT ELECTRODE; TWO-MATERIALS; WINDOW LAYER; WORK-FUNCTION DIFFERENCE;

AMORPHOUS SILICON; OPEN CIRCUIT VOLTAGE; PARTIAL PRESSURE; PHOSPHORUS; SILICON SOLAR CELLS; SOLAR CELLS; THIN FILMS; TIN; TIN OXIDES; WORK FUNCTION;

NANOSTRUCTURED MATERIALS;

EID: 84865651007     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1220     Document Type: Conference Paper

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