Monolayer graphene growth using additional etching process in atmospheric pressure chemical vapor deposition

Carbon

Volumn 50, Issue 14, 2012, Pages 5203-5209

  Yao, Yagang ^a   Wong, Ching Ping ^a,b  

^a Georgia Institute of Technology   (United States)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; ATMOSPHERIC PRESSURE CVD; BI-LAYER; CARBON PRECIPITATION; CARBON PRECURSORS; CARBON SOLUBILITY; CARBON SUPPLY; CU SUBSTRATE; ETCHING PROCESS; GRAPHENE GROWTH; HYDROGEN ETCHING; HYDROGEN EXPOSURE; METAL SUBSTRATE; NI SURFACE; NON-UNIFORM THICKNESS;

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; ETCHING; HYDROGEN; MONOLAYERS; PALLADIUM; PLATINUM; VAPORS;

GRAPHENE;

EID: 84865478154     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2012.07.003     Document Type: Article

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