Temperature dependence characterization of effective electron and hole mobilities in the accumulation layers of N- and P-type MOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 6, 1999, Pages 1290-1294

  Chindalore, G ^a   Mudanai, S ^a   Shih, W K ^a   Tasch Jr , A F ^a   Maziar, C M ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MOSFET DEVICES; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

BURIED CHANNEL MOSFET; LATTICE TEMPERATURE; MOS INVERSION CARRIERS;

CARRIER MOBILITY;

EID: 0032626293     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.766900     Document Type: Article

References (12)