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Volumn 110, Issue 3, 2011, Pages

Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 1018 × cm-3 and silicon-on-insulator thickness of less than 10 nm

(5) Kadotani, Naotoshi a Takahashi, Tsunaki a Ohashi, Teruyuki a Oda, Shunri a Uchida, Ken a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE DISTANCE; COULOMB CENTERS; DIFFUSION LAYERS; DOPING CONCENTRATION; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY ENHANCEMENT; NANO SCALE; SILICON ON INSULATOR; SILICON-ON-INSULATORS; SOI THICKNESS; THIN SOI;

ELECTRON MOBILITY; ELECTRONS; IONS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING;

NANOTECHNOLOGY;

EID: 80051931398 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3606420 Document Type: Article

Times cited : (9)

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