SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 606, Issue 21-22, 2012, Pages 1709-1715

Highly ordered growth of PTCDA on epitaxial bilayer graphene

(6) Meissner, Matthias a Gruenewald, Marco a Sojka, Falko a Udhardt, Christian a Forker, Roman a Fritz, Torsten a

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

LEED; Moir pattern; Optical in situ spectroscopy; Point on line epitaxy; Silicon carbide

Indexed keywords

EPITAXIAL BILAYERS; EPITAXIALLY GROWN; MULTI SCATTERINGS; NANOELECTRONIC DEVICES; OPTICAL IN SITU SPECTROSCOPY; ORDERED GROWTH; ORGANIC MOLECULES; RADIAL DISTORTIONS; STRUCTURAL CHARACTERIZATION; STRUCTURAL DATA;

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; SILICON CARBIDE;

GRAPHENE;

EID: 84865256577 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2012.07.016 Document Type: Article

Times cited : (28)

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