Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO 3 buffer layer

Journal of Applied Physics

Volumn 112, Issue 3, 2012, Pages

  Wang, Yu Zhan ^a   Cao, Liang ^a,b   Qi, Dong Chen ^a,c   Chen, Wei ^a   Wee, Andrew T S ^a   Gao, Xing Yu ^a,d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d SHANGHAI INSTITUTE OF APPLIED PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER MODEL; CO-SUBSTRATE; DEVICE PERFORMANCE; FERMI LEVEL PINNING; HOLE INJECTION BARRIERS; ORGANIC MATERIALS; P-TYPE; PENTACENES; SPIN-VALVE DEVICES; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

BUFFER LAYERS; CHARGE TRANSFER; PHOTOELECTRON SPECTROSCOPY;

MOLYBDENUM OXIDE;

EID: 84865221634     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4740455     Document Type: Article

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