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Volumn , Issue , 2010, Pages 364-369

Temperature dependent photoluminescence spectroscopy of InAs/GaAs solar cells

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BARRIER MATERIAL; CARRIER DYNAMICS; CONFINED MATERIALS; DEVICE PERFORMANCE; ELECTRONS AND HOLES; GAAS SOLAR CELLS; INAS/GAAS; NANO-STRUCTURED; PHONON INTERACTIONS; QUANTUM DOT; SINGLE JUNCTION; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; TEMPERATURE-INSENSITIVE; TEST STRUCTURE; THERMAL INFLUENCE;

EID: 78650153654     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616875     Document Type: Conference Paper
Times cited : (7)

References (10)
  • 2
    • 78650080794 scopus 로고    scopus 로고
    • Short circuit current enhancement of GaAs solar cells using strain compensated InAs quantum dots
    • San Diego, CA
    • S. M. Hubbard, C. G. Bailey, S. J. Polly and D. V. Forbes, "Short Circuit Current Enhancement of GaAs Solar Cells Using Strain Compensated InAs Quantum Dots," in 33rd Photovoltaic Specialists Conference, San Diego, CA, 2008.
    • (2008) 33rd Photovoltaic Specialists Conference
    • Hubbard, S.M.1    Bailey, C.G.2    Polly, S.J.3    Forbes, D.V.4
  • 3
    • 27944475153 scopus 로고    scopus 로고
    • Improved performance due to fast electronic escape in MQW p-i-n solar cells
    • Lake Beuna Vista, FL
    • A. Alemu, L. Bhusal and A. Freundlich, "Improved performance due to fast electronic escape in MQW p-i-n solar cells," in 31st Photovoltaic Specialists Conference, Lake Beuna Vista, FL, 2005.
    • (2005) 31st Photovoltaic Specialists Conference
    • Alemu, A.1    Bhusal, L.2    Freundlich, A.3
  • 5
    • 0034496973 scopus 로고    scopus 로고
    • Temperature dependence of the photoluminescence properties and band gap energy of InxGa1-xAs/GaAs quantum wells
    • J.R.Botha and A.W.R.Leitch, "Temperature dependence of the photoluminescence properties and band gap energy of InxGa1-xAs/GaAs quantum wells," Journal of Electronic Materials, vol. 29, 2000.
    • (2000) Journal of Electronic Materials , vol.29
    • Botha, J.R.1    Leitch, A.W.R.2
  • 6
    • 0039436824 scopus 로고    scopus 로고
    • Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
    • S. Martini, A.A. Quivy, A. Tabata and J.R. Leite, "Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces," J. Appl. Phys., vol. 90, 2001.
    • (2001) J. Appl. Phys. , vol.90
    • Martini, S.1    Quivy, A.A.2    Tabata, A.3    Leite, J.R.4
  • 7
    • 77955363805 scopus 로고    scopus 로고
    • Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001)
    • F. Arciprete, M. Fanfoni, F. Patella, A. Della Pia and A. Balzarotti, "Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001)," Phys. Rev. B, vol. 81, 2010.
    • (2010) Phys. Rev. B , vol.81
    • Arciprete, F.1    Fanfoni, M.2    Patella, F.3    Pia, A.D.4    Balzarotti, A.5
  • 10
    • 49949133713 scopus 로고
    • Temperature dependence of the energy gap in semiconductors
    • Y. Varshni, "Temperature dependence of the energy gap in semiconductors," Physica, vol. 34, 1967.
    • (1967) Physica , vol.34
    • Varshni, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.