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Volumn , Issue , 2011, Pages 000127-000132

Investigation of quantum dot enhanced triple junction solar cells

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BAND GAP ENGINEERING; CURRENT-VOLTAGE MEASUREMENTS; GAAS; GAAS/GE; HIGH-EFFICIENCY SOLAR CELLS; INAS; INAS QUANTUM DOTS; INTEGRATED CURRENTS; STRAIN-BALANCED; TRIPLE JUNCTION CELLS; TRIPLE JUNCTION SOLAR CELLS;

EID: 84861031460     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6185860     Document Type: Conference Paper
Times cited : (14)

References (10)
  • 9
    • 70450253354 scopus 로고    scopus 로고
    • Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence
    • C.G. Bailey, S.M. Hubbard, D.V. Forbes, R.P. Raffaelle, "Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence", Appl. Phys, Lett., Vol. 95, 2009, pp.203110-1-3.
    • (2009) Appl. Phys, Lett. , vol.95 , pp. 2031101-2031103
    • Bailey, C.G.1    Hubbard, S.M.2    Forbes, D.V.3    Raffaelle, R.P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.