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Volumn , Issue , 2011, Pages 000127-000132
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Investigation of quantum dot enhanced triple junction solar cells
a a a a a b b b |
Author keywords
[No Author keywords available]
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Indexed keywords
BAND EDGE;
BAND GAP ENGINEERING;
CURRENT-VOLTAGE MEASUREMENTS;
GAAS;
GAAS/GE;
HIGH-EFFICIENCY SOLAR CELLS;
INAS;
INAS QUANTUM DOTS;
INTEGRATED CURRENTS;
STRAIN-BALANCED;
TRIPLE JUNCTION CELLS;
TRIPLE JUNCTION SOLAR CELLS;
GERMANIUM;
INDIUM ARSENIDE;
OPEN CIRCUIT VOLTAGE;
PHOTOVOLTAIC EFFECTS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 84861031460
PISSN: 01608371
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/PVSC.2011.6185860 Document Type: Conference Paper |
Times cited : (14)
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References (10)
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