InAs quantum dot enhancement of GaAs solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1217-1222

  Hubbard, Seth M ^a   Plourde, Chelsea ^a   Bittner, Zac ^a   Bailey, Christopher G ^a   Harris, Mike ^a   Bald, Tim ^a   Bennett, Mitch ^a   Forbes, David V ^a   Raffaelle, Ryne ^b  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL-CELL; CURRENT LIMITING; GAAS; GAAS SOLAR CELLS; INAS; INAS QUANTUM DOTS; SUBBAND GAP ABSORPTION; TRIPLE JUNCTION CELLS;

GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SOLAR CELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78650146777     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614053     Document Type: Conference Paper

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