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Volumn 2, Issue 3, 2012, Pages 298-302

Photocurrent generation by two-step photon absorption with Quantum-well superlattice cell

Author keywords

Intermediate band solar cell; quantum well (QW) superlattice; two step photon absorption

Indexed keywords

ACTIVE REGIONS; AIR MASS; BARRIER THICKNESS; EFFICIENCY ENHANCEMENT; GAAS; INFRA-RED IRRADIATION; INTERMEDIATE-BAND SOLAR CELLS; PHOTOCURRENT GENERATIONS; PHOTOGENERATED ELECTRONS; PHOTON ABSORPTIONS; STRAIN-BALANCED; SUPERLATTICE LAYERS; WAVELENGTH RANGES;

EID: 84865160985     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2196258     Document Type: Article
Times cited : (19)

References (16)
  • 1
    • 0031164889 scopus 로고    scopus 로고
    • Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels
    • A. Luque and A. Mart'i, "Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels," Phys. Rev. Lett., vol. 78, pp. 5014-5017, 1997.
    • (1997) Phys. Rev. Lett. , vol.78 , pp. 5014-5017
    • Luque, A.A.1
  • 2
    • 34548180960 scopus 로고
    • Detailed balance limit of efficiency of p-n junction solar cells
    • W. Shockley and H. J. Queisser, "Detailed balance limit of efficiency of p-n junction solar cells," J. Appl. Phys., vol. 32, pp. 510-519, 1961.
    • (1961) J. Appl. Phys. , vol.32 , pp. 510-519
    • Shockley, W.1    Queisser, H.J.2
  • 4
    • 58149266735 scopus 로고    scopus 로고
    • Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design
    • S. Tomi'c, T. S. Jones, and N. M. Harrison, "Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design," Appl. Phys. Lett., vol. 93, pp. 263105-1-263105-3, 2008.
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 263105-263101
    • Tomi'c, S.1    Jones, T.S.2    Harrison, N.M.3
  • 5
    • 78649754752 scopus 로고    scopus 로고
    • Intermediate-band solar cells: Influence of band formation on dynamical processes in inas/gaas quantum dot arrays
    • S. Tomi'c, "Intermediate-band solar cells: Influence of band formation on dynamical processes in InAs/GaAs quantum dot arrays," Phys. Rev. B, vol. 82, pp. 195321-1-195321-15, 2010.
    • (2010) Phys. Rev. B , vol.82 , pp. 195321-195321
    • Tomi'c, S.1
  • 6
    • 51349102477 scopus 로고    scopus 로고
    • Strain-compensated inas/ganas quantum dots for use in high-efficiency solar cells
    • R. Oshima, A. Takata, and Y. Okada, "Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells," Appl. Phys. Lett., vol. 93, pp. 083111-1-083111-3, 2008.
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 083111-083111
    • Oshima, R.1    Takata, A.2    Okada, Y.3
  • 7
    • 68249143041 scopus 로고    scopus 로고
    • Characteristics of inas/ganas strain-compensated quantum dot solar cell
    • Y. Okada, R. Oshima, and A. Takata, "Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell," J. Appl. Phys., vol. 106, pp. 024306-1-024306-3, 2009.
    • (2009) J. Appl. Phys. , vol.106 , pp. 024306-024301
    • Okada, Y.1    Oshima, R.2    Takata, A.3
  • 8
    • 54049151979 scopus 로고    scopus 로고
    • Real time analysis of selfassembled inas/gaas quantum dot growth by probing reflection highenergy electron diffraction chevron image
    • T. Kudo, T. Inoue, T. Kita, and O. Wada, "Real time analysis of selfassembled InAs/GaAs quantum dot growth by probing reflection highenergy electron diffraction chevron image," J. Appl. Phys., vol. 104, pp. 074305-1-074305-5, 2008.
    • (2008) J. Appl. Phys. , vol.104 , pp. 074305-074301
    • Kudo, T.1    Inoue, T.2    Kita, T.3    Wada, O.4
  • 9
    • 77957735270 scopus 로고    scopus 로고
    • Impurity doping in self-Assembled inas/gaas quantum dots by selection of growth steps
    • T. Inoue, S. Kido, K. Sasayama, T. Kita, and O. Wada, "Impurity doping in self-Assembled InAs/GaAs quantum dots by selection of growth steps," J. Appl. Phys., vol. 108, pp. 063524-1-063524-5, 2010.
    • (2010) J. Appl. Phys. , vol.108 , pp. 063524-063521
    • Inoue, T.1    Kido, S.2    Sasayama, K.3    Kita, T.4    Wada, O.5
  • 10
    • 0035471351 scopus 로고    scopus 로고
    • Partial filling of a quantum dot intermediate band for solar cells
    • DOI 10.1109/16.954482, PII S0018938301083617
    • A. Mart'i, L. Cuadra, and A. Luque, "Partial filling of a quantum dot intermediate band for solar cells," IEEE Trans. Electron Devices, vol. 48, no. 10, pp. 2394-2399, Oct. 2001. (Pubitemid 33018207)
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.10 , pp. 2394-2399
    • Marti, A.1    Cuadra, L.2    Luque, A.3
  • 11
    • 79551660696 scopus 로고    scopus 로고
    • Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped inas/ganas strain-compensated quantum dot solar cell
    • Y. Okada, T. Morioka, K. Yoshida, R. Ohshima, Y. Shoji, T. Inoue, and T. Kita, "Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell," J. Appl. Phys., vol. 109, pp. 024301-1-024301-5, 2011.
    • (2011) J. Appl. Phys. , vol.109 , pp. 024301-024301
    • Okada, Y.1    Morioka, T.2    Yoshida, K.3    Ohshima, R.4    Shoji, Y.5    Inoue, T.6    Kita, T.7
  • 12
    • 77957680210 scopus 로고    scopus 로고
    • Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics
    • K.Yoshida,Y. Okada, andN. Sano, "Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics," Appl. Phys. Lett., vol. 97, pp. 133503-1-133503-3, 2010.
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 133503-133501
    • Yoshida, K.1    Okada, Y.2    Sano, N.3
  • 13
    • 79951688541 scopus 로고    scopus 로고
    • Energy band structure and the half-filling of the intermediate band in the quantum-dot solar cell
    • W. G. Hu, T. Inoue, O. Kojima, and T. Kita, "Energy band structure and the half-filling of the intermediate band in the quantum-dot solar cell," Physica Status Solidi c, vol. 8, pp. 622-624, 2011.
    • (2011) Physica Status Solidi c , vol.8 , pp. 622-624
    • Hu, W.G.1    Inoue, T.2    Kojima, O.3    Kita, T.4
  • 14
    • 84878183921 scopus 로고    scopus 로고
    • Intermediate band photovoltaics based on interband-intraband transitions using in0.53ga0.47 as/inp superlattice
    • in press, DOI: 10.1002/pip.1208
    • W. Hu, Y. Harada, A. Hasegawa, T. Inoue, O. Kojima, and T. Kita, "Intermediate band photovoltaics based on interband-intraband transitions using In0.53Ga0.47 As/InP superlattice," Prog. Photovoltaics: Res. Appl., 2011, in press, DOI: 10.1002/pip.1208.
    • (2011) Prog. Photovoltaics: Res. Appl.
    • Hu, W.1    Harada, Y.2    Hasegawa, A.3    Inoue, T.4    Kojima, O.5    Kita, T.6
  • 15
    • 84863305313 scopus 로고    scopus 로고
    • Management of highly-strained heterointerface in ingaas/gaasp strain-balanced syperlattice for photovoltaic application
    • in press, DOI: 10.1016/j.jcrysgro.2011.12.049
    • Y. Wang, S. Ma, K. Watanabe, M. Sugiyama, and Y. Nakano, "Management of highly-strained heterointerface in InGaAs/GaAsP strain-balanced syperlattice for photovoltaic application," J. Crystal. Growth, in press, DOI: 10.1016/j.jcrysgro.2011.12.049.
    • J. Crystal. Growth
    • Wang, Y.1    Ma, S.2    Watanabe, K.3    Sugiyama, M.4    Nakano, Y.5
  • 16
    • 84865185689 scopus 로고    scopus 로고
    • A super-lattice solar cell with enhanced short-circuit current and minimized drop in open-circuit voltage
    • Mar. 21, in press
    • Y. Wang, Y. Wen, H. Sodabanlu, K. Watanabe, M. Sugiyama, and Y. Nakano, "A super-lattice solar cell with enhanced short-circuit current and minimized drop in open-circuit voltage," IEEE J. Photovoltaics, Mar. 21, 2012, in press.
    • (2012) IEEE J. Photovoltaics
    • Wang, Y.1    Wen, Y.2    Sodabanlu, H.3    Watanabe, K.4    Sugiyama, M.5    Nakano, Y.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.