Management of highly-strained heterointerface in InGaAs/GaAsP strain-balanced superlattice for photovoltaic application

Journal of Crystal Growth

Volumn 352, Issue 1, 2012, Pages 194-198

  Wang, Yun Peng ^a   Ma, Shao Jun ^b   Watanabe, Kentarou ^a   Sugiyama, Masakazu ^b   Nakano, Yoshiaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Surface structure; A3. Physical vapor deposition processes; B1. Gallium arsenic; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL QUALITIES; GAAS; HETERO INTERFACES; HIGHLY STRAINED; IN-SITU REFLECTIVITY MEASUREMENTS; INTERFACE MORPHOLOGIES; INTERFACIAL STRAIN; MINIMUM STRESS; MORPHOLOGY DEGRADATION; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC DEVICES; PHYSICAL VAPOR DEPOSITION PROCESS; SEMI CONDUCTING III-V MATERIALS; SMART INTERFACE; STRAIN-BALANCED; SUPER-LATTICE STRUCTURES;

ARSENIC; DEGRADATION; MONOLAYERS; MORPHOLOGY; SUPERLATTICES; X RAY DIFFRACTION;

PHOTOVOLTAIC EFFECTS;

EID: 84863305313     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.12.049     Document Type: Conference Paper

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