P-type cuox thin films by RF-plasma enhanced reactive thermal evaporation: Influence of RF-power density

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 8, 2012, Pages 6754-6757

  Lavareda, G ^a   De Carvalho, C Nunes ^a,b   Ferraria, A M ^c   Botelho Do Rego, A M ^c   Amaral, A ^b  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^c UNIVERSITY OF LISBON   (Portugal)

Author keywords

Copper Oxide; P Type Thin Films; Rf Plasma Enhanced Reactive Thermal Evaporation (rf PERTE)

Indexed keywords

ELECTRICAL AND OPTICAL PROPERTIES; MATERIAL CHARACTERISTICS; OPTICAL AND ELECTRICAL PROPERTIES; P TYPE SEMICONDUCTOR; P-TYPE; P-TYPE CONDUCTIVITY; POST DEPOSITION ANNEALING; RADIO FREQUENCY PLASMA; RF PLASMA; RF-POWER; ROOM TEMPERATURE; THERMAL ACTIVATION ENERGIES; THERMAL OXIDATION; THICKNESS OF THE FILM; XPS ANALYSIS;

ACTIVATION ENERGY; ATMOSPHERIC PRESSURE; COPPER; COPPER OXIDES; DEPOSITION; ELECTRIC PROPERTIES; KURCHATOVIUM; OPTICAL PROPERTIES; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION;

CONDUCTIVE FILMS;

EID: 84865131644     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.4556     Document Type: Conference Paper

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