InOx semiconductor films deposited on glass substrates for transparent electronics

Journal of Non-Crystalline Solids

Volumn 352, Issue 23-25, 2006, Pages 2315-2318

  Nunes de Carvalho, C ^a,b   Lavareda, G ^a,b   Amaral, A ^b   Conde, O ^c   Ramos, A R ^d  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^c UNIVERSITY OF LISBON   (Portugal)

^d INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Thin film transistors; Tin oxide

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY; GLASS; PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES; THERMAL EFFECTS; THIN FILM TRANSISTORS; TIN COMPOUNDS;

RADIO FREQUENCY (RF) PLASMA ENHANCED REACTIVE THERMAL EVAPORATION (RF-PERTE); SUBSTRATE TEMPERATURE; THERMAL EVAPORATION; TIN OXIDE;

SEMICONDUCTING FILMS;

EID: 33746994084     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.01.085     Document Type: Article

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