Improved performance of ZnO-based resistive memory by internal diffusion of ag atoms

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 8, 2012, Pages 6271-6275

  Peng, Chung Nan ^a   Wang, Chun Wen ^a   Huang, Jian Shiou ^a   Chang, Wen Yuan ^a   Wu, Wen Wei ^a   Chueh, Yu Lun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Ag ZnO Pt; Filament Path; Forming; Oxygen Vacancies; Pt ZnO Pt; Switching

Indexed keywords

AG ATOMS; BOTTOM ELECTRODES; CONDUCTING PATHS; CONDUCTIVE FILAMENTS; FORMING PROCESS; INTERNAL DIFFUSION; RESISTIVE MECHANISM; RESISTIVE MEMORIES; RESISTIVE SWITCHING; SWITCHING PERFORMANCE; TRANSMISSION ELECTRON MICROSCOPE; ZNO FILMS;

ELECTRODES; FORMING; SWITCHING; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 84865118717     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.6499     Document Type: Conference Paper

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