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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 6, 2010, Pages 1718-1720

Switching characteristics of ZnO based transparent resistive random access memory devices grown by pulsed laser deposition

(3) Misra, Pankaj a Das, Amit K a Kukreja, Lalit M a

a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY (India)

Author keywords

Devices; Electrical properties; PLD; ZnO

Indexed keywords

CONDUCTION MECHANISM; ELECTRICAL PROPERTY; IMPURITY DOPING; LOW COSTS; LOW POWER; LOW RESISTANCE; MEMORY EFFECTS; METAL OXIDE THIN FILMS; METAL OXIDES; NON-VOLATILE; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SWITCHING CHARACTERISTICS; TWO-STATE; VISIBLE SPECTRAL REGIONS; WIDE-BAND-GAP SEMICONDUCTOR; ZNO;

ELECTRIC PROPERTIES; METALLIC COMPOUNDS; OXIDE FILMS; PULSED LASER DEPOSITION; PULSED LASERS; RANDOM ACCESS STORAGE; SEMICONDUCTOR GROWTH; SWITCHING; THIN FILMS;

ZINC OXIDE;

EID: 77955434789 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200983244 Document Type: Conference Paper

Times cited : (30)

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