Size dependence of TiN/HfO2/Ti MIM ReRAM resistance states: Model and experimental results

Current Applied Physics

Volumn 10, Issue 1 SUPPL. 1, 2010, Pages

  Chen, Frederick T ^a   Lee, Heng Yuan ^a   Chen, Yu Sheng ^a   Chen, Pang Shiu ^b   Gu, Peggy ^a   Chen, Chi Wei ^a   Hsu, Yen Ya ^a   Liu, Wen Hsing ^a   Chen, Wei Su ^a   Tsai, Ming Jinn ^a   Lo, Shen Chuan ^a   Lai, Ming Wei ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Damage; Metal oxide; Resistance switching

Indexed keywords

HIGH RESISTANCE; METAL OXIDES; METAL-INSULATOR-METAL STRUCTURES; PERCOLATING CONDUCTION; PROCESS EFFECTS; RADIAL DISTRIBUTION FUNCTIONS; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE STATE; RESISTANCE SWITCHING; SIZE DEPENDENCE; STATE CONDUCTION;

FILAMENTS (LAMP); METAL INSULATOR BOUNDARIES; METALLIC COMPOUNDS; METALS; MIM DEVICES; RANDOM ACCESS STORAGE;

DISTRIBUTION FUNCTIONS;

EID: 77649236002     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.12.018     Document Type: Article

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