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Volumn 1408, Issue , 2012, Pages 139-144

Silicon nanowires obtained by low temperature plasma-based chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR; EQUIVALENT THICKNESS; GOLD NANODOTS; INDUCTIVELY-COUPLED; LOW TEMPERATURES; METAL CATALYST; PLASMA POWER; SELECTIVE GROWTH; SI SUBSTRATES; SILICON NANOWIRES; VAPOR-LIQUID-SOLID GROWTH;

EID: 84865036913     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2012.718     Document Type: Conference Paper
Times cited : (9)

References (16)
  • 1
    • 33846979420 scopus 로고    scopus 로고
    • N. S. Lewis, Science 315, 798 (2007).
    • (2007) Science , vol.315 , pp. 798
    • Lewis, N.S.1
  • 15
    • 84865021406 scopus 로고    scopus 로고
    • Suppression of the 2D growth during the synthesis of Si nanowires by Inductively Coupled Chemical Vapor Deposition
    • submitted to
    • "Suppression of the 2D growth during the synthesis of Si nanowires by Inductively Coupled Chemical Vapor Deposition", R. A. Puglisi, G. Mannino, S. Scalese, A. La Magna, V. Privitera, submitted to APL.
    • APL
    • Puglisi, R.A.1    Mannino, G.2    Scalese, S.3    La Magna, A.4    Privitera, V.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.