Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Nanotechnology

Volumn 20, Issue 15, 2009, Pages

  Zardo, I ^a   Yu, L ^b   Conesa Boj, S ^c   Estrade S ^c   Alet, Pierre Jean ^b   Rossler J ^a   Frimmer, M ^a   Roca I Cabarrocas, P ^b   Peiro F ^c   Arbiol, J ^c   Morante, J R ^c,d   Fontcuberta I Morral, A ^a,e  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c UNIVERSITY OF BARCELONA   (Spain)

^d CATALONIA INSTITUTE FOR ENERGY RESEARCH IREC   (Spain)

^e EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE CATALYSTS; CRYSTALLINE GROWTHS; CRYSTALLINE QUALITIES; CRYSTALLINE STRUCTURES; SILICON NANOWIRES; VAPOR-LIQUID-SOLID GROWTH MECHANISMS;

CATALYSIS; CATALYSTS; CRYSTALLINE MATERIALS; ELECTRIC WIRE; GALLIUM; GOLD DEPOSITS; GROWTH TEMPERATURE; NANOWIRES; PLASMA DEPOSITION; PLASMAS; SYNTHESIS (CHEMICAL); VAPORS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

GALLIUM; GOLD; NANOWIRE; SILICON;

ARTICLE; CATALYST; CHEMICAL STRUCTURE; CONTROLLED STUDY; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; GROWTH REGULATION; PLASMA; PRIORITY JOURNAL; RAMAN SPECTROMETRY; SYNTHESIS; TEMPERATURE; THICKNESS; VAPOR; WET DEPOSITION;

EID: 65549093682     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/15/155602     Document Type: Article

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