Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories

NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings

Volumn 2006, Issue , 2006, Pages 463-466

  Chen, Y Y ^a,b   Li, T H ^c   Kin, K T ^a   Chien, C H ^c   Lou, J C ^c  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b YUANPEI UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC BREAKDOWN; FLASH MEMORY; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SPUTTER DEPOSITION;

DIELECTRIC RELIABILITIES; INTER POLY DIELECTRIC (IPD);

DIELECTRIC MATERIALS;

EID: 33750806760     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANOEL.2006.1609772     Document Type: Conference Paper

References (9)

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