SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 520, Issue 21, 2012, Pages 6681-6683

High performance self-aligned top-gate ZnO thin film transistors using sputtered Al 2O 3 gate dielectric

(4) Chen, Rongsheng a Zhou, Wei a Zhang, Meng a Kwok, Hoi Sing a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

Aluminum oxide; Self aligned structure; Thin film transistors; Zinc oxide

Indexed keywords

ALUMINUM OXIDES; ALUMINUM TARGET; DRIVING DEVICE; FIELD-EFFECT MOBILITIES; ON/OFF CURRENT RATIO; OXYGEN AMBIENT; REACTIVE DC MAGNETRON SPUTTERING; ROOM TEMPERATURE; SELF-ALIGNED; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); ZINC OXIDE (ZNO); ZNO;

ALUMINUM; ALUMINUM COATINGS; FLAT PANEL DISPLAYS; GATE DIELECTRICS; THIN FILMS; TRANSISTORS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84864762992 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.06.066 Document Type: Article

Times cited : (29)

References (12)

1
- 0037415828
- R.L. Hoffman, B.J. Norris, and J.F. Wager Appl. Phys. Lett. 82 2003 733
- (2003) Appl. Phys. Lett. , vol.82 , pp. 733
- Hoffman, R.L.¹ Norris, B.J.² Wager, J.F.³

2
- 7544247006
- E.M.C. Fortunato, P.M.C. Barquinha, A.C.M.B.G. Pimentel, A.M.F. Goncalves, A.J.S. Marques, R.F.P. Martins, and L.M.N. Pereira Appl. Phys. Lett. 85 2004 2541
- (2004) Appl. Phys. Lett. , vol.85 , pp. 2541
- Fortunato, E.M.C.¹ Barquinha, P.M.C.² Pimentel, A.C.M.B.G.³ Goncalves, A.M.F.⁴ Marques, A.J.S.⁵ Martins, R.F.P.⁶ Pereira, L.M.N.⁷

3
- 38649124068
- J.H. Kim, B. Du Ahn, C.H. Lee, K.A. Jeon, H.S. Kang, and S.Y. Lee Thin Solid Films 516 2008 1529
- (2008) Thin Solid Films , vol.516 , pp. 1529
- Kim, J.H.¹ Du Ahn, B.² Lee, C.H.³ Jeon, K.A.⁴ Kang, H.S.⁵ Lee, S.Y.⁶

4
- 72149133355
- W.S. Choi J. Soc. Info. Display 17 2009 751
- (2009) J. Soc. Info. Display , vol.17 , pp. 751
- Choi, W.S.¹

5
- 59849110632
- M.G. McDowell, and I.G. Hill IEEE Trans. Electron Devices 56 2009 343
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 343
- McDowell, M.G.¹ Hill, I.G.²

6
- 44849089572
- I. Song, S. Kim, H.X. Yin, C.J. Kim, J. Park, S. Kim, H.S. Choi, E. Lee, and Y. Park IEEE Electron Device Lett. 29 2008 549
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 549
- Song, I.¹ Kim, S.² Yin, H.X.³ Kim, C.J.⁴ Park, J.⁵ Kim, S.⁶ Choi, H.S.⁷ Lee, E.⁸ Park, Y.⁹

7
- 9744248669
- (London)
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Nature 432 2004 488 (London)
- (2004) Nature , vol.432 , pp. 488
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

8
- 64349105658
- J.B. Kim, C. Fuentes-Hernandez, W.J. Potscavage, X.H. Zhang, and B. Kippelen Appl. Phys. Lett. 94 2009 142107
- (2009) Appl. Phys. Lett. , vol.94 , pp. 142107
- Kim, J.B.¹ Fuentes-Hernandez, C.² Potscavage, W.J.³ Zhang, X.H.⁴ Kippelen, B.⁵

9
- 79955549843
- L.F. Lan, and J.B. Peng IEEE Trans. Electron Devices 58 2011 1452
- (2011) IEEE Trans. Electron Devices , vol.58 , pp. 1452
- Lan, L.F.¹ Peng, J.B.²

10
- 61449241800
- M. Voigt, A. Bergmaier, G. Dollinger, and M. Sokolowski J. Vac. Sci. Technol., A 27 2009 234
- (2009) J. Vac. Sci. Technol., A , vol.27 , pp. 234
- Voigt, M.¹ Bergmaier, A.² Dollinger, G.³ Sokolowski, M.⁴

11
- 0038650905
- J. Zaumseil, K.W. Baldwin, and J.A. Rogers J. Appl. Phys. 93 2003 6117
- (2003) J. Appl. Phys. , vol.93 , pp. 6117
- Zaumseil, J.¹ Baldwin, K.W.² Rogers, J.A.³

12
- 33746606543
- H.H. Hsieh, and C.C. Wu Appl. Phys. Lett. 89 2006 041109
- (2006) Appl. Phys. Lett. , vol.89 , pp. 041109
- Hsieh, H.H.¹ Wu, C.C.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.