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Volumn 45, Issue 33, 2012, Pages

Photoinduced current transient spectroscopy of defect levels in CuInSe 2 and CuGaSe 2 epitaxial and polycrystalline layers

(6) Krysztopa, A a Igalson, M a Larsen, J K b,c Aida, Y b,c Gutay L b Siebientritt, S b,d

a WARSAW UNIVERSITY OF TECHNOLOGY (Poland)

b UNIVERSITY OF LUXEMBOURG (Luxembourg)

c UNIVERSITY OF DELAWARE (United States)

d TDK CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND ILLUMINATION; CU(IN , GA)SE; DEEP HOLE TRAP; DEEP-LEVELS; DEFECT LEVELS; MODULATED PHOTOCURRENT; PHOTO-INDUCED CURRENT TRANSIENT SPECTROSCOPIES; POLYCRYSTALLINE LAYERS; POLYCRYSTALLINE SAMPLES; RECOMBINATION CENTRES; STRUCTURAL DEFECT;

COPPER COMPOUNDS; DEFECTS; EPITAXIAL GROWTH; MODEL PREDICTIVE CONTROL; SEMICONDUCTING SELENIUM COMPOUNDS;

POWER QUALITY;

EID: 84864694010 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/33/335101 Document Type: Article

Times cited : (16)

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