Defect levels in the epitaxial and polycrystalline CuGaSe2 by photocurrent and capacitance methods

Journal of Applied Physics

Volumn 110, Issue 10, 2011, Pages

  Krysztopa, Adam ^a   Igalson, Magorzata ^a   Aida, Yasuhiro ^b,c   Larsen, Jes K ^b   Gtay, Levent ^b   Siebentritt, Susanne ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF LUXEMBOURG   (Luxembourg)

^c TDK CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE METHOD; CAPACITANCE RESPONSE; CAPACITANCE SPECTROSCOPY; DEFECT LEVELS; ELECTRONIC PARAMETERS; INTRINSIC DEFECTS; LIGHT INTENSITY; MATERIAL STOICHIOMETRY; MODULATED PHOTOCURRENT; PHOTOVOLTAIC PERFORMANCE; POLYCRYSTALLINE; POLYCRYSTALLINE LAYERS; SCHOTTKY DIODES; WIDE BAND GAP;

CAPACITANCE; COPPER COMPOUNDS; EPITAXIAL GROWTH; POINT DEFECTS; POLYCRYSTALLINE MATERIALS; SCHOTTKY BARRIER DIODES; SOLAR POWER GENERATION; STOICHIOMETRY;

DEFECTS;

EID: 82555168909     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3662198     Document Type: Conference Paper

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