Defect distributions in thin film solar cells deduced from admittance measurements under different bias voltages

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Decock, Koen ^a   Khelifi, Samira ^a   Buecheler, Stephan ^b   Pianezzi, Fabian ^b   Tiwari, Ayodhya N ^b   Burgelman, Marc ^a  

^a GHENT UNIVERSITY   (Belgium)

^b SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE MEASUREMENTS; BACK CONTACT; CU(IN , GA)SE; DEFECT DISTRIBUTION; DEFECT LEVELS; DIRECT LINKS; FREEZE OUT; MEASUREMENT FREQUENCY; NON-UNIFORMITIES; THIN FILM SOLAR CELLS; VOLTAGE DEPENDENCE;

CAPACITANCE; COPPER; DEFECT DENSITY; DEFECTS; GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS;

BIAS VOLTAGE;

EID: 80053480934     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3641987     Document Type: Article

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