MOVPE of CuGaSe2 on GaAs in the presence of a CuxSe secondary phase

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 82-86

  Gütay, Levent ^a   Larsen, Jes K ^a   Guillot, Jerome ^b   Müller, Mathias ^c   Bertram, Frank ^c   Christen, Jrgen ^c   Siebentritt, Susanne ^a  

^a UNIVERSITY OF LUXEMBOURG   (Luxembourg)

^b LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY   (Luxembourg)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

A1. Diffusion; A1. Secondary phases; A3. Metalorganic vapor phase epitaxy; B1. CuGaSe2; B1. Selenides; B2. Semiconducting ternary compounds

Indexed keywords

A1. DIFFUSION; CUGASE2; METAL-ORGANIC VAPOR PHASE EPITAXY; SECONDARY PHASIS; SELENIDES; SEMICONDUCTING TERNARY COMPOUNDS;

COPPER; COPPER COMPOUNDS; DIFFUSION; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; TERNARY ALLOYS; TERNARY SYSTEMS; VAPORS;

GALLIUM ALLOYS;

EID: 79551686265     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.09.035     Document Type: Article

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