Single-photon emission from electrically driven InP quantum dots epitaxially grown on CMOS-compatible Si(001)

Nanotechnology

Volumn 23, Issue 33, 2012, Pages

  Wiesner, M ^a   Schulz, W M ^a   Kessler, C ^a   Reischle, M ^a   Metzner, S ^b   Bertram, F ^b   Christen, J ^b   Robach, R ^a   Jetter, M ^a   Michler, P ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS COMPATIBLE; DEFECT-FREE; DETECTION EFFICIENCY; EPITAXIALLY GROWN; HIGH DEFECT DENSITIES; II-IV SEMICONDUCTORS; INP QUANTUM DOTS; MATERIAL PROPERTY; METAL-ORGANIC; RADIATIVE RECOMBINATION PROCESS; SI(0 0 1); SILICON AVALANCHE PHOTODIODE; SINGLE PHOTON EMISSION; SPECTRAL REGION; VAPOUR-PHASE; WAVELENGTH RANGES;

EPITAXIAL GROWTH; INDIUM PHOSPHIDE; PARTICLE BEAMS; SEMICONDUCTOR QUANTUM DOTS;

SILICON;

EID: 84864592275     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/33/335201     Document Type: Article

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