Electroluminescence and structural characteristics of InAs/ In0.1 Ga0.9 As quantum dots grown on graded Si1-x Gex /Si substrate

Applied Physics Letters

Volumn 95, Issue 14, 2009, Pages

  Tanoto, H ^a   Yoon, S F ^a,b   Lew, K L ^a   Loke, W K ^a   Dohrman, C ^c   Fitzgerald, E A ^b,c   Tang, L J ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE MIT ALLIANCE   (Singapore)

^c Massachusetts Institute of Technology   (United States)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RECOMBINATION; EXTERNAL QUANTUM EFFICIENCY; INJECTED CURRENT; OPTICAL POWER; QUANTUM DOT; QUANTUM DOTS; ROOM TEMPERATURE; SELF-ASSEMBLED; SI SUBSTRATES; STRUCTURAL CHARACTERISTICS;

ASPECT RATIO; ELECTROLUMINESCENCE; LIGHT EMISSION; OPTICAL WAVEGUIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349904314     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3243984     Document Type: Article

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