Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer

Nanotechnology

Volumn 23, Issue 33, 2012, Pages

  Kim, Moonkyung ^a   Hwang, Jeonghyun ^a   Lepak, Lori A ^b   Lee, Jo Won ^c   Spencer, Michael G ^a   Tiwari, Sandip ^a  

^a School of Operations Research and Industrial Engineering   (United States)

^b UNIVERSITY OF WISCONSIN STEVENS POINT   (United States)

^c Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; DIELECTRIC BUFFERS; DIELECTRIC LAYER; EPITAXIAL GRAPHENE; POLYVINYL ALCOHOL (PVA);

CARRIER MOBILITY; DEGRADATION; DIELECTRIC FILMS; EPITAXIAL GROWTH; GATE DIELECTRICS; HAFNIUM OXIDES; SILICON; SILICON CARBIDE;

GRAPHENE;

EID: 84864578706     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/33/335202     Document Type: Article

References (20)

1. Han M Y, Oezyilmaz B, Zhang Y and Kim P 2007 Phys. Rev. Lett. 98 206805 (Pubitemid 47139572)
2. Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666-9 (Pubitemid 39440910)
3. Bolotin K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J, Kim P and Stormer H L 2008 Solid State Commun. 146 351
4. Kim K S, Zhao Y, Jang H, Lee S Y, Kim J M, Kim K S, Ahn J, Kim P, Choi J and Hong B H 2009 Nature 457 706
5. Kim D H et al 2008 Science 320 507-11 (Pubitemid 351590659)
6. Sekitani T et al 2008 Science 321 1468-72
7. Zhang Y, Tan Y W, Stormer H L and Kim P 2005 Nature 438 201 (Pubitemid 41599868)
8. Berger C, Song Z, Li T, Li X, Feng R, Conrad E H and de Heer W A 2004 Phys. Chem. B 108 19912-6 (Pubitemid 40079151)
9. Hwang J, Shields V B, Thomas C I, Shivaraman S, Hao D, Kim M, Woll A S and Spencer M G 2010 J. Cryst. Growth 312 3219-24
10. Forbeaux I, Themlin J M and Debever J M 1998 Phys. Rev. B 58 16398-406
11. Ferrari A et al 2007 Solid State Commun. 143 47-57 (Pubitemid 46874496)
12. Reina A, Jia X, Ho J, Nezich D, Son H, Bulovic V, Dresselhaus M S and Kong J 2009 Nano Lett. 9 30-5
13. Shivaraman S, Chandrashekhar M V S, Boeckl J J and Spencer M G 2009 J. Electron. Mater. 38 725
14. Tuinstra F and Koenig J L 1970 J. Chem. Phys. 53 1126
15. Tedesco J L, VanMil B L, Myers-Ward R L, McCrate J M, Kitt S A, Campbell P M, Jernigan G G, Culbertson J C, Eddy C R and Gaskill D K 2009 Appl. Phys. Lett. 95 122102
16. Hass J, Feng R, Li T, Li X, Zong Z and de Heer W A 2006 Appl. Phys. Lett. 89 143106 (Pubitemid 44522255)
17. Lemme M C, Echtermeyer T J and Kurz H 2007 IEEE Electron Device Lett. 28 4
18. Song S M and Cho B J 2010 Nanotechnology 21 335706
19. Wilkinson G, Rosenblum M, Whiting M C and Woodward R B 1952 J. Am. Chem. Soc. 74 2125-6
20. Robinson J A, Hollander M, LaBella M, Trumbull K A, Cavalero R and Snyder D W 2011 Nano Lett. 11 3875-80