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Chemical Physics Letters

Volumn 543, Issue , 2012, Pages 92-95

Comprehensive investigations on the feasibility of nitrogen as a p-type dopant in ZnO

(4) Li, Ping a Deng, Shenghua b Liu, Guohong a Hou, Kui a

a ANHUI JIANZHU UNIVERSITY (China)

b BEIHANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT COMPLEX; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; P-TYPE; P-TYPE CONDUCTIVITY; P-TYPE DOPANT; P-TYPE DOPING; TRANSITION LEVEL; VALENCE-BAND MAXIMUMS; ZNO;

CALCULATIONS; DEFECTS; NITROGEN; ZINC;

ZINC OXIDE;

EID: 84864490747 PISSN: 00092614 EISSN: None Source Type: Journal
DOI: 10.1016/j.cplett.2012.06.064 Document Type: Article

Times cited : (8)

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