Multibranch mobility analysis for the characterization of FDSOI transistors

IEEE Electron Device Letters

Volumn 33, Issue 8, 2012, Pages 1102-1104

  Navarro, Carlos ^a   Rodriguez, Noel ^a   Ohata, Akiko ^b   Gamiz, Francisco ^a   Andrieu, François ^c   Fenouillet Beranger, Claire ^d   Faynot, Olivier ^c   Cristoloveanu, Sorin ^e  

^a UNIVERSITY OF GRANADA   (Spain)

^b Osaka Prefecture University   (Japan)

^c CEA LETI   (France)

^d STMICROELECTRONICS   (France)

^e MINATEC   (France)

Author keywords

Effective field; mobility; SOI MOSFETs; split C(V); ultrathin SOI; universal mobility

Indexed keywords

BACK-GATE BIAS; CARRIER-PROFILE; EFFECTIVE FIELD; FULLY DEPLETED; MOBILITY ANALYSIS; MOBILITY ENHANCEMENT; NOVEL TECHNIQUES; SOI-MOSFETS; SPLIT C(V); TECHNOLOGICAL FACTORS; ULTRA-THIN;

ELECTRIC FIELDS; MOSFET DEVICES;

CARRIER MOBILITY;

EID: 84864467280     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2198193     Document Type: Article

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