Properties of 22nm node extremely-thin-SOI MOSFETs

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2011, Pages

  Rodriguez, N ^a   Andrieu, F ^b   Navarro, C ^a   Faynot, O ^b   Gamiz, F ^a   Cristoloveanu, S ^c  

^a UNIVERSITY OF GRANADA   (Spain)

^b CEA LETI   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; DENSITY OF STATE; INTERFACE COUPLINGS; MOBILITY DEGRADATION; MOSFETS; SOI-MOSFETS; TEMPERATURE RANGE; TRANSPORT CHARACTERISTICS;

SILICON COMPOUNDS; TRANSPORT PROPERTIES;

MOSFET DEVICES;

EID: 83455213673     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2011.6081681     Document Type: Conference Paper

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