Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices

IEEE Electron Device Letters

Volumn 33, Issue 8, 2012, Pages 1132-1134

  Zhou, Chunhua ^a   Jiang, Qimeng ^a   Huang, Sen ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN high electron mobility transistors (HEMTs); silicon substrate; space charge limited current (SCLC) conduction; traps; vertical breakdown

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; SILICON SUBSTRATES; SPACE-CHARGE-LIMITED CURRENT; TRAPS; VERTICAL BREAKDOWN;

CARRIER TRANSPORT; ELECTRIC CONDUCTIVITY; HIGH ELECTRON MOBILITY TRANSISTORS; SILICON;

GALLIUM NITRIDE;

EID: 84864436559     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2200874     Document Type: Article

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