Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 193-194

  Lu, Bin ^a   Piner, Edwin L ^b,c   Palacios, Tomás ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

^b NITRONEX CORPORATION   (United States)

^c TEXAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BREAKDOWN MECHANISM; BREAKDOWN VOLTAGE; ELECTRONICS APPLICATIONS; GLASS WAFER; LAYER 2; LOW COSTS; SI SUBSTRATES; SPECIFIC-ON-RESISTANCE;

ELECTRON MOBILITY; GALLIUM NITRIDE; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957573206     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551907     Document Type: Conference Paper

References (4)

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4. B. Lu, E.L. Piner, T. Palacios, IEEE Electron Device Lett., vol. 31, no. 4, pp. 302-304, Apr. 2010.