Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Umeda, Hidekazu ^a   Suzuki, Asamira ^a   Anda, Yoshiharu ^a   Ishida, Masahiro ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BLOCKING VOLTAGE; BREAKDOWN VOLTAGE; CHANNEL STOPPER; DEPLETION LAYER; FABRICATION COST; INVERSION LAYER; JUNCTION FIELD EFFECT TRANSISTORS; NOVEL TECHNIQUES; SI SUBSTRATES;

ELECTRON DEVICES; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; TECHNOLOGY;

GALLIUM ALLOYS;

EID: 79951821368     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703400     Document Type: Conference Paper

References (7)

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