Oxygen background gas influence on pulsed laser deposition process of LaAlO 3 and LaGaO 3

Applied Surface Science

Volumn 258, Issue 23, 2012, Pages 9116-9122

  Amoruso, S ^a,b   Aruta, C ^b   Aurino, P ^a   Bruzzese, R ^a,b   Wang, X ^b   Granozio, F Miletto ^b   Scotti Di Uccio, U ^a,b  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b CNR SPIN   (Italy)

Author keywords

Oxides; Plasma plume spectroscopy; Pulsed laser deposition

Indexed keywords

ABLATION; ALUMINUM COMPOUNDS; DEPOSITION RATES; GALLIUM COMPOUNDS; KINETIC ENERGY; KINETICS; LANTHANUM COMPOUNDS; LASER ABLATION; OPTICAL EMISSION SPECTROSCOPY; OXIDES; OXYGEN; PULSED LASER DEPOSITION; PULSED LASERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

ABLATION PLUMES; BACKGROUND PRESSURE; FAST PHOTOGRAPHY; INFLUENCE OF OXYGEN; OXYGEN BACKGROUND GAS; OXYGEN PRESSURE; PLASMA PLUMES; VACANCY FORMATION;

OXYGEN VACANCIES;

EID: 84864423051     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.09.078     Document Type: Conference Paper

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