Electrical properties of the graphitic carbon contacts on carbon nanotube field effect transistors

Applied Physics Letters

Volumn 101, Issue 3, 2012, Pages

  Tamaoki, Masato ^a   Kishimoto, Shigeru ^a   Ohno, Yutaka ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED OXYGEN; AMBIPOLAR; BARRIER HEIGHTS; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CONDUCTION TYPE; GRAPHITIC CARBONS; IN-VACUUM; P-TYPE CONDUCTION;

ELECTRIC PROPERTIES; VACUUM;

ELECTRIC FIELD EFFECTS;

EID: 84864258988     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737169     Document Type: Article

References (15)

1. G. Pennington and N. Goldsman, Phys. Rev. 68, 045426 (2003). 10.1103/PhysRevB.68.045426
2. J. Guo, S. Hasan, A. Javey, G. Bosman, and M. Lundstrom, IEEE. Trans. Nanotechnol. 4, 715 (2005). 10.1109/TNANO.2005.858601
3. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature 424, 654 (2003). 10.1038/nature01797
4. G. H. Gelinick, H. E. A. Huitema, E. V. Veenendaal, E. Cantatore, L. Schrijnemakers, J. B. P. H. V. D. Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B.-H. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. V. Rens, and D. M. D. Leeuw, Nature Mater. 3, 106 (2004). 10.1038/nmat1061
5. Q. Cao, H. Kim, N. Pimparkar, J. P. Kulkarni, C. Wang, M. Shim, K. Roy, M. A. Alam, and J. A. Rogers, Nature 454, 495 (2008). 10.1038/nature07110
6. D. M. Sun, M. Y. Timmermans, Y. Tian, A. G. Nasibulin, E. I. Kauppinen, S. Kishimoto, T. Mizutani, and Y. Ohno, Nat. Nanotechnol. 6, 156 (2011). 10.1038/nnano.2011.1
7. L. Nougaret, H. Happy, G. Dambrine, V. Derycke, J.-P. Bourgoin, A. A. Green, and M. C. Hersmam, Appl. Phys. Lett. 94, 243505 (2009). 10.1063/1.3155212
8. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998). 10.1063/1.122477
9. Y. Nosho, Y. Ohno, S. Kishimoto, and T. Mizutani, Appl. Phys. Lett. 86, 073105 (2005). 10.1063/1.1865343
10. Z. Zhang, X. Liang, S. Wang, K. Yao, Y. Hu, Y. Zhu, Q. Chen, W. Zhou, Y. Li, Y. Yao, J. Zhang, and L.-M. Peng, Nano. Lett. 7, 3603 (2007). 10.1021/nl0717107
11. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002). 10.1103/PhysRevLett.89.106801
12. S. C. Lim, J. H. Jang, D. J. Bae, G. H. Han, S. Lee, I.-S. Yeo, and Y. H. Lee, Appl. Phys. Lett. 95, 264103 (2009). 10.1063/1.3255016
13. Y. Chai, A. Hazeghi, K. Takei, H.-Y. Chen, P. C. H. Chan, A. Javey, and H.-S. P. Wang. IEEE Trans. Electron Devices 59, 12 (2012). 10.1109/TED.2011. 2170216
14. V. Derycke, R. Martel, J. Appenzeller, and Ph. Avouris, Appl. Phys. Lett. 80, 2773 (2002). 10.1063/1.1467702
15. W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, Nano. Lett. 3, 193 (2003). 10.1021/nl0259232