First-principles study of the electronic structures and optical properties of C-F-Be doped wurtzite ZnO

Journal of Semiconductors

Volumn 33, Issue 7, 2012, Pages

  Zuo, Chunying ^a   Wen, Jing ^a   Zhong, Cheng ^b  

^a HEILONGJIANG BAYI AGRICULTURAL UNIVERSITY   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

electronic structures; first principles; optical properties; wurtzite ZnO

Indexed keywords

C INCORPORATION; C-DOPED; CO-DOPED; COMPLEX DIELECTRIC FUNCTIONS; DEFECT COMPLEX; DOPED SYSTEMS; DOPED ZNO; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; ENERGY REGIONS; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDY; IMAGINARY PARTS; P TYPE ZNO; PLANE WAVE; PURE ZNO; ULTRASOFT PSEUDO POTENTIAL; VALENCE-BAND MAXIMUMS; WURTZITE STRUCTURE; WURTZITES; ZNO;

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; OPTICAL PROPERTIES; ZINC; ZINC SULFIDE;

ZINC OXIDE;

EID: 84864253609     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/33/7/072001     Document Type: Article

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