The effect of C-Al (Ga) codoping on p-type tendency in zinc oxide by first-principles

Optical Materials

Volumn 32, Issue 5, 2010, Pages 595-598

  Zuo, Chunying ^a   Wen, Jing ^a   Zhu, Shenglong ^b   Zhong, Cheng ^c  

^a HEILONGJIANG AUGUST FIRST LAND RECLAMATION UNIVERSITY   (China)

^b INSTITUTE OF METAL RESEARCH   (China)

^c WUHAN UNIVERSITY   (China)

Author keywords

Codoping; Electronic structures; First principles; ZnO

Indexed keywords

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; ENERGY GAP; ZINC OXIDE;

ACCEPTOR CONCENTRATIONS; ACCEPTOR ENERGY; CO-DOPED ZNO; CO-DOPING; FIRST PRINCIPLES; HOLE CARRIERS; MADELUNG ENERGY; VALENCE-BAND MAXIMUMS;

II-VI SEMICONDUCTORS;

EID: 75849127285     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2009.12.006     Document Type: Article

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